GB/T 11093-1989
Replaced
GB/T 41652-2022
Active
National standards
GB/T 41652-2022 Silicon electrode and silicon ring for plasma etching machine
GB/T 41652-2022 Silicon electrode and silicon ring for plasma etching machine
Basic Information
Standard Code:
GB/T 41652-2022
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Element semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2022-07-11
Implement Date:
2023-02-01
Pages:
8 pages
Scope
This document specifies the technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, and accompanying documents for silicon electrodes and silicon rings used in etching machines. This document is applicable to silicon electrodes and silicon rings with a diameter of 200 mm to 450 mm, which are processed from p<100> directly pulled silicon single crystals and used in etching machines.
Development Information
Referenced Standards
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques
GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques
GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
GB/T 1557-1989 The method of determining interstitial oxygen content in silicon by infrared absorption
GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption
GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption
GB/T 1558-1997 Test method for substitutional atomic carbon content of silicon by infrared absorption
GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption
GB/T 1558-2023 Test method for substitutional carbon content in silicon by infrared absorption
GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 11073-1989 Standard method for measuring radial resistivity variation on silicon slices
GB/T 11073-2007 Standard method for measuring radial resistivity variation on silicon slices
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 29505-2013 Test method for measuring surface roughness on planar surfaces of silicon wafer
GB/T 11073-2025 Test method for measuring radial resistivity variation on silicon wafers
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced