GB/T 43885-2024 Silicon carbide epitaxial wafers

GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 14146-1993 Silicon epitaxial layers—Determination of carrier concentration—Mercury probe Valtage-capacitance method GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 19921-2005 Test method of particles on silicon wafer surfaces GB/T 19921-2018 Test method for particles on polished silicon wafer surfaces GB/T 29505-2013 Test method for measuring surface roughness on planar surfaces of silicon wafer GB/T 30656-2014 Polished monocrystalline silicon carbide wafers GB/T 30656-2023 Polished monocrystalline silicon carbide wafers GB/T 32278-2015 Test method for flatness of monocrystalline silicon carbide wafers GB/T 39145-2020 Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry GB/T 42902-2023 Test method for surface defects on silicon carbide epitaxial wafers—Laser scattering method GB/T 42905-2023 Test method for thickness of silicon carbide epitaxial layer—Infrared reflectance method YS/T 28-1992 Silicon wafer packaging YS/T 28-2015 Package of silicon wafers YS/T 28-2024 YS/T 28-2024 Silicon wafer packaging and labeling GB/T 32278-2025 Test method for thickness and fltaness of monocrystalline silicon carbide wafers