GB/T 47404-2026 Pending National standards

GB/T 47404-2026 Monocrystalline silicon carbide

GB/T 47404-2026 Monocrystalline silicon carbide

Publish Date: 2026-03-31 Implement Date: 2026-10-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us
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Basic Information

Standard Code: GB/T 47404-2026
Standard Type: National standards
Standard Status: Pending
is_force_gb: no
CCS Name: Compound semiconductor materials
ICS Name: Semiconductor materials
Publish Date: 2026-03-31
Implement Date: 2026-10-01
Pages: 12 pages

Scope

This document specifies the grades and classification, technical requirements, test methods, inspection rules, as well as marking, packaging, transportation, storage, and the contents of accompanying documents and order forms for silicon carbide single crystals.
This document is applicable to 4H and 6H silicon carbide single crystals with a diameter not exceeding 300 mm.
Note: The products are mainly used for the production of silicon carbide single crystal wafers, and are widely used in the manufacture of power electronic devices, radio frequency and microwave devices, and light-emitting diode (LED) lighting devices.

Development Information

Word Count: 15 Thousand words Pages: 12 pages

Referenced Standards

GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 26067-2010 Standard test method for dimensions of notches on silicon wafers GB/T 30656-2014 Polished monocrystalline silicon carbide wafers GB/T 30656-2023 Polished monocrystalline silicon carbide wafers GB/T 30868-2014 Test method for measuring micropipe density of monocrystalline silicon carbide wafers—Chemically etching GB/T 30868-2025 Test method for micropipe density of monocrystalline silicon carbide GB/T 41765-2022 Test method for dislocation density of monocrystalline silicon carbide GB/T 42271-2022 Test method for resistivity of semi-insulating monocrystalline silicon carbide by contactless measurement GB/T 43612-2023 Collection of metallographs on defects in silicon carbide crystal materials SJ/T 11501-2015 SJ/T 11501-2015 Test method for crystal morphology of silicon carbide single crystal YS/T 1600-2023 Determination of Trace Impurity Element Content in Silicon Carbide Single Crystals Using Plasma-Based Mass Spectrometry

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