GB/T 11093-1989
Replaced
GB/T 35305-2026
Active
National standards
GB/T 35305-2026 Gallium arsenide monocrystalline and monocrystalline polished wafers for solar cell
GB/T 35305-2026 Gallium arsenide monocrystalline and monocrystalline polished wafers for solar cell
Price:
$ 36.00
Basic Information
Standard Code:
GB/T 35305-2026
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Compound semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2026-01-28
Implement Date:
2026-08-01
Pages:
16 pages
Scope
This document specifies the classification and grades, technical requirements, inspection rules, marking, packaging, transportation, storage, and accompanying documents and order forms for GaAs single crystals and polished wafers used in solar batteries, and describes the corresponding test methods.
This document is applicable to the production, inspection, and quality evaluation of GaAs single crystals and polished wafers used in solar batteries.
Development Information
Replace the following standards
Referenced Standards
GB/T 191-2000 Packaging—Pictorial marking for handling of goods
GB/T 191-2008 Packaging—Pictorial marking for handling of goods
GB/T 191-2025 Graphical symbols marking for handling and storage of packages
GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 4326-1984 Extrinsic semiconductor single crystals—measurement of Hall mobility and Hall coefficient
GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
GB/T 4326-2025 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices
GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices
GB/T 6620-1995 Test method for measuring warp on silicon slices by noncontact scanning
GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning
GB/T 6621-1995 Test methods for surface flatness of silicon polished slices
GB/T 6621-2009 Testing methods for surface flatness of silicon slices
GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 8760-1988 Gallium arsenide single crystal—Determination of dislocation density
GB/T 8760-2006 Gallium arsenide single crystal—Determination of dislocation density
GB/T 8760-2020 Test method for dislocation density of monocrystal gallium arsenide
GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices
GB/T 11093-2007 Liquid encapsulated czochralski-grown gallium arsenide single crystals and as-cut slices
GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials
GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials
GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer
GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer
GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method
GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 14844-1993 Designations of semiconductor materials
GB/T 14844-2018 Designations of semiconductor materials
GB/T 19921-2005 Test method of particles on silicon wafer surfaces
GB/T 19921-2018 Test method for particles on polished silicon wafer surfaces
GB/T 29505-2013 Test method for measuring surface roughness on planar surfaces of silicon wafer
YS/T 26-1992 Test Method for the Edge Contour of Silicon Wafers
YS/T 26-2016 Test methods for edge contour of silicon wafers
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced