GB/T 41325-2022 Active National standards

GB/T 41325-2022 Low density crystal originated pit polished monocrystalline silicon wafers for integrated circuit

GB/T 41325-2022 Low density crystal originated pit polished monocrystalline silicon wafers for integrated circuit

Publish Date: 2022-03-09 Implement Date: 2022-10-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 41325-2022

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Element semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2022-03-09

Implement Date: 2022-10-01

Pages: 9 pages

Scope

This document specifies the technical requirements, test methods, inspection rules, packaging, marking, transportation, storage, accompanying documents, and order form content for low-density crystal original pit silicon single-crystal wafers (hereinafter referred to as Low-COP wafers).
This document is applicable to Low-COP wafers with a diameter of 200 mm and 300 mm, <100> crystal orientation, and resistivity of 0.1 Ω·cm to 100 Ω·cm, which are sensitive to crystal original pits and are used in integrated circuits.

Development Information

Word Count: 20 Thousand words Pages: 9 pages

Referenced Standards

SEMI M43 SEMI M67 SEMI M68 SEMI M70 SEMI M77 GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 4058-1995 Test method for detection of oxidation induced defects in polished silicon wafers GB/T 4058-2009 Test method for detection of oxidation induced defects in polished silicon wafers GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 12962-1996 Monocrystalline silicon GB/T 12962-2005 Monoccrystalline silicon GB/T 12962-2015 Monocrystalline silicon GB/T 12965-1996 Monocrystalline silicon as cut slices and lapped slices GB/T 12965-2005 Monocrystalline silicon as cut slices and lapped slices GB/T 12965-2018 Monocrystalline silicon as cut wafers and lapped wafers GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 19921-2005 Test method of particles on silicon wafer surfaces GB/T 19921-2018 Test method for particles on polished silicon wafer surfaces GB/T 29504-2013 300 mm monocrystalline silicon GB/T 29505-2013 Test method for measuring surface roughness on planar surfaces of silicon wafer GB/T 29507-2013 Test method for measuring flatness,thickness and total thickness variation on silicon wafers—Automated non-contact scanning GB/T 29508-2013 300 mm monocrystalline silicon as cut slices and grinded slices GB/T 32280-2015 Test method for warp of silicon wafers—Automated non-contact scanning method GB/T 32280-2022 Test method for warp and bow of silicon wafers—Automated non-contact scanning method GB/T 39145-2020 Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry YS/T 28-1992 Silicon wafer packaging YS/T 28-2015 Package of silicon wafers YS/T 679-2008 Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-state surface photovoltage YS/T 679-2018 The test of minority carrier diffusion length in non-intrinsic semiconductor using surface photovoltage method YS/T 28-2024 YS/T 28-2024 Silicon wafer packaging and labeling

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06