GB/T 29508-2013 Active National standards

GB/T 29508-2013 300 mm monocrystalline silicon as cut slices and grinded slices

GB/T 29508-2013 300 mm monocrystalline silicon as cut slices and grinded slices

Publish Date: 2013-05-09 Implement Date: 2014-02-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 29508-2013

Standard Type: National standards

Standard Status: Active

is_force_gb: no

CCS Name: Element semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2013-05-09

Implement Date: 2014-02-01

Pages: 7 pages

Scope

This standard specifies the terms and definitions, technical requirements, test methods, inspection rules, and marking, packaging, transportation, and storage for silicon single-crystal cutting and grinding slices (referred to as silicon wafers) with a diameter of 300 mm, a P-type orientation, a <100> crystal orientation, and a resistivity of 0.5Ω·cm to 20Ω·cm.
This standard applies to circular silicon wafers prepared by cutting and grinding 300 mm directly pulled single crystals. The products will be further processed into polished wafers, which are used to make substrate wafers meeting the line width requirements of 90nm for integrated circuits (ICs).

Development Information

Word Count: 12 Thousand words Pages: 7 pages

Referenced Standards

SEMI MF 1390 GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 1557-1989 The method of determining interstitial oxygen content in silicon by infrared absorption GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption GB/T 1558-1997 Test method for substitutional atomic carbon content of silicon by infrared absorption GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption GB/T 1558-2023 Test method for substitutional carbon content in silicon by infrared absorption GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 11073-1989 Standard method for measuring radial resistivity variation on silicon slices GB/T 11073-2007 Standard method for measuring radial resistivity variation on silicon slices GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 26067-2010 Standard test method for dimensions of notches on silicon wafers GB/T 29504-2013 300 mm monocrystalline silicon GB/T 29507-2013 Test method for measuring flatness,thickness and total thickness variation on silicon wafers—Automated non-contact scanning YS/T 26-1992 YS/T 26-2016 Test methods for edge contour of silicon wafers GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer GB/T 11073-2025 Test method for measuring radial resistivity variation on silicon wafers

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06