GB/T 11093-1989
Replaced
GB/T 26069-2022
Active
National standards
GB/T 26069-2022 Annealed monocrystalline silicon wafers
GB/T 26069-2022 Annealed monocrystalline silicon wafers
Basic Information
Standard Code:
GB/T 26069-2022
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Element semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2022-03-09
Implement Date:
2022-10-01
Pages:
9 pages
Scope
This document specifies the classification, technical requirements, test methods, inspection rules, packaging, marking, transportation, storage, accompanying documents, and order form content of silicon single-crystal annealed wafers (hereinafter referred to as annealed wafers).
This document applies to silicon wafers that have a certain width of clean zones formed on the surface of polished silicon single-crystal wafers through the annealing process. The products are used in integrated circuits with a technology generation of 180 nm to 22 nm.
Development Information
Replace the following standards
Referenced Standards
GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
GB/T 4058-1995 Test method for detection of oxidation induced defects in polished silicon wafers
GB/T 4058-2009 Test method for detection of oxidation induced defects in polished silicon wafers
GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage
GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge
GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 12962-1996 Monocrystalline silicon
GB/T 12962-2005 Monoccrystalline silicon
GB/T 12962-2015 Monocrystalline silicon
GB/T 12965-1996 Monocrystalline silicon as cut slices and lapped slices
GB/T 12965-2005 Monocrystalline silicon as cut slices and lapped slices
GB/T 12965-2018 Monocrystalline silicon as cut wafers and lapped wafers
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 19921-2005 Test method of particles on silicon wafer surfaces
GB/T 19921-2018 Test method for particles on polished silicon wafer surfaces
GB/T 29504-2013 300 mm monocrystalline silicon
GB/T 29507-2013 Test method for measuring flatness,thickness and total thickness variation on silicon wafers—Automated non-contact scanning
GB/T 29508-2013 300 mm monocrystalline silicon as cut slices and grinded slices
GB/T 32280-2015 Test method for warp of silicon wafers—Automated non-contact scanning method
GB/T 32280-2022 Test method for warp and bow of silicon wafers—Automated non-contact scanning method
GB/T 39145-2020 Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry
YS/T 28-1992 Silicon wafer packaging
YS/T 28-2015 Package of silicon wafers
YS/T 679-2008 Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-state surface photovoltage
YS/T 679-2018 The test of minority carrier diffusion length in non-intrinsic semiconductor using surface photovoltage method
YS/T 28-2024 YS/T 28-2024 Silicon wafer packaging and labeling
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced