GB/T 26069-2010 Replaced National standards

GB/T 26069-2010 Specification for silicon annealed wafers

GB/T 26069-2010 Specification for silicon annealed wafers

Publish Date: 2011-01-10 Implement Date: 2011-10-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 26069-2010
Standard Type: National standards
Standard Status: Replaced
is_force_gb: no
CCS Name: Semi-metals and semiconductor materials
ICS Name: Semiconductor materials
Publish Date: 2011-01-10
Implement Date: 2011-10-01
Pages: 8 pages

Scope

This standard specifies the requirements, test methods, and inspection rules for silicon annealed wafers used in the manufacture of semiconductor devices and integrated circuits.
This standard applies to annealed silicon wafers for linewidths of 180nm, 130nm, and 90nm processes.

Development Information

Word Count: 13 Thousand words Pages: 8 pages

Superseded by the following standards

Referenced Standards

GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 1557-1989 The method of determining interstitial oxygen content in silicon by infrared absorption GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 4058-1995 Test method for detection of oxidation induced defects in polished silicon wafers GB/T 4058-2009 Test method for detection of oxidation induced defects in polished silicon wafers GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices GB/T 6620-1995 Test method for measuring warp on silicon slices by noncontact scanning GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning GB/T 6621-1995 Test methods for surface flatness of silicon polished slices GB/T 6621-2009 Testing methods for surface flatness of silicon slices GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 11073-1989 Standard method for measuring radial resistivity variation on silicon slices GB/T 11073-2007 Standard method for measuring radial resistivity variation on silicon slices GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method GB/T 14144-1993 Test method for determination of radial interstitial oxygen variation in silicon GB/T 14144-2009 Testing method for determination of radial interstitial oxygen variation in silicon GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 19921-2005 Test method of particles on silicon wafer surfaces GB/T 19921-2018 Test method for particles on polished silicon wafer surfaces GB/T 24578-2009 Test method for measuring surface metal contamination on silicon wafers by total reflection X-ray fluorescence spectroscopy GB/T 24578-2015 Test method for measuring surface metal contamination on silicon wafers by total reflection X-Ray fluorescence spectroscopy GB/T 24578-2024 Test method for measuring surface metal contamination on semiconductor wafers—Total reflection X-Ray fluorescence spectroscopy YS/T 26-1992 Test Method for the Edge Contour of Silicon Wafers YS/T 26-2016 Test methods for edge contour of silicon wafers GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer GB/T 11073-2025 Test method for measuring radial resistivity variation on silicon wafers

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