YS/T 1167-2016 Active Industry standards-Non-ferrous metals

YS/T 1167-2016 Monocrystalline silicon etched wafers

YS/T 1167-2016 Monocrystalline silicon etched wafers

Publish Date: 2016-07-11 Implement Date: 2017-01-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: YS/T 1167-2016

Standard Type: Industry standards

Standard Status: Active

is_force_gb: no

CCS Name: Element semiconductor materials

ICS Name: Semiconductor materials

Publish Date: 2016-07-11

Implement Date: 2017-01-01

Pages: 10 pages

Scope

This standard specifies the grades and classification, requirements, test methods, inspection rules, and marking, packaging, transportation, storage, quality certificates, and order forms (or contracts) of silicon single-crystal corrosion slices.
This standard applies to acid corrosion slices and alkali corrosion slices (hereinafter referred to as corrosion slices) prepared by removing the surface damage layer with chemical corrosion solution from silicon single-crystal grinding slices prepared by the direct-pulling method and the floating zone melting method (including zone melting neutron transmutation and gas phase doping). The products are mainly used for making semiconductor components such as transistors, rectifiers, ultra-high power thyristors, and photoelectric devices, or for further processing into silicon polished slices.

Development Information

Word Count: 18 Thousand words Pages: 10 pages

Referenced Standards

GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices GB/T 6620-1995 Test method for measuring warp on silicon slices by noncontact scanning GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning GB/T 11073-1989 Standard method for measuring radial resistivity variation on silicon slices GB/T 11073-2007 Standard method for measuring radial resistivity variation on silicon slices GB/T 12962-1996 Monocrystalline silicon GB/T 12962-2005 Monoccrystalline silicon GB/T 12962-2015 Monocrystalline silicon GB/T 12965-1996 Monocrystalline silicon as cut slices and lapped slices GB/T 12965-2005 Monocrystalline silicon as cut slices and lapped slices GB/T 12965-2018 Monocrystalline silicon as cut wafers and lapped wafers GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer GB/T 14140.1-1993 Silicon slices and wafers—Measuring of diameter—Optical projecting method GB/T 14140.2-1993 Silicon slices and wafers—Measuring of diameter—Micrometer method GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 14844-1993 Designations of semiconductor materials GB/T 14844-2018 Designations of semiconductor materials GB/T 20503-2006 Anodizing of aluminium and its alloys—Measurement of specular reflectance and specular gloss at angles of 20°,45°,60°or 85° GB/T 26067-2010 Standard test method for dimensions of notches on silicon wafers GB/T 29505-2013 Test method for measuring surface roughness on planar surfaces of silicon wafer GB/T 30453-2013 Metallographs collection for original defects of crystalline silicon YS/T 26-1992 Test Method for the Edge Contour of Silicon Wafers YS/T 26-2016 Test methods for edge contour of silicon wafers YS/T 28-1992 Silicon wafer packaging YS/T 28-2015 Package of silicon wafers YS/T 28-2024 YS/T 28-2024 Silicon wafer packaging and labeling GB/T 14140-2025 Test method for measuring diameter of semiconductor wafer GB/T 11073-2025 Test method for measuring radial resistivity variation on silicon wafers

Related Standards

GB/T 11093-1989 Replaced

GB/T 11093-1989 Liquid encapsulated czochralski-grown gallium arsenide single crystals and As-cut slices

Publish Date: 1989-03-31

GB/T 13388-1992 Replaced

GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques

Publish Date: 1992-02-19

GB/T 13389-1992 Replaced

GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon

Publish Date: 1992-02-19

GB/T 13843-1992 Abolished

GB/T 13843-1992 Polished monocrystalline sapphire substrates

Publish Date: 1992-12-28

GB/T 14015-1992 Active

GB/T 14015-1992 Silicon on sapphire epitaxial wafers

Publish Date: 1992-12-28

GB/T 14139-1993 Replaced

GB/T 14139-1993 Silicon epitaxial wafers

Publish Date: 1993-02-06