GB/T 11093-1989
Replaced
GB/T 26071-2026
Active
National standards
GB/T 26071-2026 Monocry stallinesilicon and wafers for solar cells
GB/T 26071-2026 Monocry stallinesilicon and wafers for solar cells
Price:
$ 54
Basic Information
Standard Code:
GB/T 26071-2026
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Element semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2026-01-28
Implement Date:
2026-08-01
Pages:
16 pages
Scope
This document specifies the grades and classification, technical requirements, inspection rules, marking, packaging, transportation, storage, and accompanying documents and order forms for silicon single crystals (referred to as "silicon single crystals") and silicon single crystal wafers (referred to as "silicon wafers") used in solar cells, and describes the corresponding test methods.
This document is applicable to silicon single crystals prepared by the direct-pulling method and silicon single crystal wafers processed from them.
Development Information
Replace the following standards
Referenced Standards
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques
GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques
GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
GB/T 1557-1989 The method of determining interstitial oxygen content in silicon by infrared absorption
GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption
GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption
GB/T 1558-1997 Test method for substitutional atomic carbon content of silicon by infrared absorption
GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption
GB/T 1558-2023 Test method for substitutional carbon content in silicon by infrared absorption
GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage
GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge
GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices
GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices
GB/T 6619-1995 Test methods for bow of silicon slices
GB/T 6619-2009 Test methods for bow of silicon wafers
GB/T 11073-2007 Standard method for measuring radial resistivity variation on silicon slices
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 14844-1993 Designations of semiconductor materials
GB/T 14844-2018 Designations of semiconductor materials
GB/T 30859-2014 Test method for warp and waviness of silicon wafers for solar cells
GB/T 30860-2014 Test methods for surface roughness and saw mark of silicon wafers for solar cells
GB/T 42907-2023 Test method for excess-charge-carrier recombination lifetime in silicon ingots,silicon bricks and silicon wafers—Noncontact eddy-current sensor
SJ/T 11630-2016 SJ/T 11630-2016 Geometric Dimension Test Method for Silicon Substrates Used in Solar Cells
YS/T 28-1992 Silicon wafer packaging
YS/T 28-2015 Package of silicon wafers
YS/T 28-2024 YS/T 28-2024 Silicon wafer packaging and labeling
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced