JB/T 5838-1991 KP Series 1000A and above rated reverse blocking triode thyristors with shell

JB/T 8950.2-2013 General Thyristor - Part 2: Flat Devices

GB 4024 GB/T 4937-1995 Mechanical and climatic test methods for semiconductor devices GB/T 4937.1-2006 Semiconductor devices—Mechanical and climatic test methods—Part 1:General GB/T 4937.2-2006 Semiconductor devices—Mechanical and climatic test methods—Part 2:Low air pressure GB/T 4937.3-2012 Semiconductor devices—Mechanical and climatic tests methods—Part 3:External visual examination GB/T 4937.4-2012 Semiconductor devices—Mechanical and climatic test methods—Part 4:Damp heat,steady state,highly accelerated stress test(HAST) GB/T 4937.11-2018 Semiconductor devices—Mechanical and climatic test methods—Part 11:Rapid change of temperature—Two-fluid-bath method GB/T 4937.12-2018 Semiconductor devices—Mechanical and climatic test methods—Part 12:Vibration,variable frequency GB/T 4937.13-2018 Semiconductor devices—Mechanical and climatic test methods—Part 13:Salt atmosphere GB/T 4937.14-2018 Semiconductor devices—Mechanical and climatic test methods—Part 14:Robustness of terminations(lead integrity） GB/T 4937.15-2018 Semiconductor devices—Mechanical and climatic test methods—Part 15:Resistance to soldering temperature for through-hole mounted devices GB/T 4937.17-2018 Semiconductor devices—Mechanical and climatic test methods—Part 17:Neutron irradiation GB/T 4937.18-2018 Semiconductor devices—Mechanical and climatic test methods—Part 18:Ionizing radiation(total dose) GB/T 4937.19-2018 Semiconductor devices—Mechanical and climatic test methods—Part 19:Die shear strength GB/T 4937.20-2018 Semiconductor devices—Mechanical and climatic test methods—Part 20:Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat GB/T 4937.21-2018 Semiconductor devices—Mechanical and climatic test methods—Part 21:Solderability GB/T 4937.22-2018 Semiconductor devices—Mechanical and climatic test methods—Part 22:Bond strength GB/T 4937.23-2023 Semiconductor devices—Mechanical and climatic test methods—Part 23:High temperature operating life GB/T 4937.26-2023 Semiconductor devices—Mechanical and climate test methods—Part 26:Electrostatic discharge(ESD)sensitivity testing—Human body model(HBM) GB/T 4937.27-2023 Semiconductor devices—Mechanical and climatic test methods—Part 27:Electrostatic discharge (ESD) sensitivity testing—Machine model (MM) GB/T 4937.30-2018 Semiconductor devices—Mechanical and climatic test methods—Part 30:Preconditioning of non-hermetic surface mount devices prior to reliability testing GB/T 4937.31-2023 Semiconductor devices—Mechanical and climatic test methods—Part 31:Flammability of platic-encapsulated devices(internally induced) GB/T 4937.32-2023 Semiconductor devices—Mechanical and climatic test methods—Part 32:Flammability of platic-encapsulated devices(externally induced) GB/T 4937.34-2024 Semiconductor devices—Mechanical and climatic test methods—Part 34: Power cycling GB/T 4937.35-2024 Semiconductor devices—Mechanical and climatic test methods—Part 35:Acoustic microscopy for plastic encapsulated electronic components GB/T 4937.42-2023 Semiconductor devices—Mechanical and climatic test methods—Part 42:Temperature and humidity storage GB/T 4937.201-2018 Semiconductor devices—Mechanical and climatic test methods—Part 20-1:Handling,packing,labelling and shipping of surface-mount devices sensitive to the combined effect of moisture and soldering heat GB 4938 ZB K46 003 GB/T 4937.16-2025 Semiconductor devices—Mechanical and climatic test methods—Part 16:Particle impact noise detection(PIND) GB/T 4937.33-2025 Semiconductor devices—Mechanical and climatic test methods—Part 33:Accelerated moisture resistance—Unbiased autoclave GB/T 4937.36-2025 Semiconductor devices—Mechanical and climatic test methods—Part 36:Acceleration,steady state GB/T 4937.38-2025 Semiconductor devices—Mechanical and climatic test methods—Part 38:Soft error test method for semiconductor devices with memory GB/T 4937.44-2025 Semiconductor devices—Mechanical and climatic test methods—Part 44:Neutron beam irradiated single event effect(SEE) test method for semiconductor devices GB/T 4937.29-2025 Semiconductor devices—Mechanical and climatic test methods—Part 29:Latch-up test GB/T 4937.24-2025 Semiconductor devices—Mechanical and climatic test methods—Part 24:Accelerated moisture resistance—Unbiased HAST GB/T 4937.25-2025 Semiconductor devices—Mechanical and climatic test methods—Part 25:Temperature cycling GB/T 4937.40-2025 Semiconductor devices—Mechanical and climatic test methods—Part 40:Board level drop test method using a strain gauge GB/T 4937.39-2025 Semiconductor devices—Mechanical and climatic test methods—Part 39:Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components GB/T 4937.8-2025 Semiconductor devices—Mechanical and climatic test methods—Part 8:Sealing GB/T 4937.10-2025 Semiconductor devices—Mechanical and climatic tests methods—Part 10:Mechanical Shock—Device and subassembly GB/T 4937.37-2025 Semiconductor devices—Mechanical and climatic test methods—Part 37:Board level drop test method using an accelerometer GB/T 4937.9-2026 Semiconductor devices—Mechanical and climatic test methods—Part 9:Permanence of marking GB/T 4937.41-2026 Semiconductor devices—Mechanical and climatic test methods—Part 41:Test method for reliability of non-volatile memory devices GB/T 4937.28-2026 Semiconductor devices—Mechanical and climate test methods—Part 28:Electrostatic discharge(ESD)sensitivity testing—Charged device model(CDM)—device level