GB/T 35310-2017 Active National standards

GB/T 35310-2017 200 mm silicon epitaxial wafer

GB/T 35310-2017 200 mm silicon epitaxial wafer

Publish Date: 2017-12-29 Implement Date: 2018-07-01 For services related to genuine standard inquiry, procurement, translation, and other related services in China, please Contact Us

Basic Information

Standard Code: GB/T 35310-2017
Standard Type: National standards
Standard Status: Active
is_force_gb: no
CCS Name: Element semiconductor materials
ICS Name: Semiconductor materials
Publish Date: 2017-12-29
Implement Date: 2018-07-01
Pages: 9 pages

Scope

This standard specifies the terms and definitions, product classification, requirements, test methods, inspection rules, and marking, packaging, transportation, storage, and quality certificates for 200 mm silicon epitaxial wafers. This standard applies to silicon epitaxial wafers grown on N-type and P-type polished silicon substrates. The products are mainly used in the manufacture of integrated circuits or semiconductor devices.

Development Information

Word Count: 16 Thousand words Pages: 9 pages

Referenced Standards

GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection GB/T 6617-1995 Test method for measuring resistivity of silicon wafers using spreading resistance probe GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices GB/T 6619-1995 Test methods for bow of silicon slices GB/T 6619-2009 Test methods for bow of silicon wafers GB/T 6620-1995 Test method for measuring warp on silicon slices by noncontact scanning GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning GB/T 6621-1995 Test methods for surface flatness of silicon polished slices GB/T 6621-2009 Testing methods for surface flatness of silicon slices GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection GB/T 12964-2003 Monocrystalline silicon polished wafers GB/T 12964-2018 Monocrystalline silicon polished wafers GB/T 14141-1993 Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array GB/T 14142-1993 Test method for crystallographic perfection of epitaxial layers in silicon by etching techniques GB/T 14142-2017 Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique GB/T 14146-1993 Silicon epitaxial layers—Determination of carrier concentration—Mercury probe Valtage-capacitance method GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method GB/T 14264-1993 Semiconductor materials—Terms and definitions GB/T 14264-2009 Semiconductor materials—Terms and definitions GB/T 14264-2024 Terminology of semiconductor materials GB/T 14847-1993 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance GB/T 19921-2005 Test method of particles on silicon wafer surfaces GB/T 19921-2018 Test method for particles on polished silicon wafer surfaces GB/T 24578-2009 Test method for measuring surface metal contamination on silicon wafers by total reflection X-ray fluorescence spectroscopy GB/T 24578-2015 Test method for measuring surface metal contamination on silicon wafers by total reflection X-Ray fluorescence spectroscopy GB/T 24578-2024 Test method for measuring surface metal contamination on semiconductor wafers—Total reflection X-Ray fluorescence spectroscopy GB/T 29507-2013 Test method for measuring flatness,thickness and total thickness variation on silicon wafers—Automated non-contact scanning GB/T 32280-2015 Test method for warp of silicon wafers—Automated non-contact scanning method GB/T 32280-2022 Test method for warp and bow of silicon wafers—Automated non-contact scanning method YS/T 28-1992 Silicon wafer packaging YS/T 28-2015 Package of silicon wafers YS/T 28-2024 YS/T 28-2024 Silicon wafer packaging and labeling GB/T 14847-2025 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates—Infrared reflectance method

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