GB/T 11093-1989
Replaced
GB/T 35310-2017
Active
National standards
GB/T 35310-2017 200 mm silicon epitaxial wafer
GB/T 35310-2017 200 mm silicon epitaxial wafer
Basic Information
Standard Code:
GB/T 35310-2017
Standard Type:
National standards
Standard Status:
Active
is_force_gb:
no
CCS Name:
Element semiconductor materials
ICS Name:
Semiconductor materials
Publish Date:
2017-12-29
Implement Date:
2018-07-01
Pages:
9 pages
Scope
This standard specifies the terms and definitions, product classification, requirements, test methods, inspection rules, and marking, packaging, transportation, storage, and quality certificates for 200 mm silicon epitaxial wafers. This standard applies to silicon epitaxial wafers grown on N-type and P-type polished silicon substrates. The products are mainly used in the manufacture of integrated circuits or semiconductor devices.
Development Information
Referenced Standards
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
GB/T 2828.1-2003 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 2828.1-2012 Sampling procedures for inspection by attributes—Part 1:Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 6617-1995 Test method for measuring resistivity of silicon wafers using spreading resistance probe
GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe
GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices
GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices
GB/T 6619-1995 Test methods for bow of silicon slices
GB/T 6619-2009 Test methods for bow of silicon wafers
GB/T 6620-1995 Test method for measuring warp on silicon slices by noncontact scanning
GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning
GB/T 6621-1995 Test methods for surface flatness of silicon polished slices
GB/T 6621-2009 Testing methods for surface flatness of silicon slices
GB/T 6624-1995 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 6624-2009 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 12964-2003 Monocrystalline silicon polished wafers
GB/T 12964-2018 Monocrystalline silicon polished wafers
GB/T 14141-1993 Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array
GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array
GB/T 14142-1993 Test method for crystallographic perfection of epitaxial layers in silicon by etching techniques
GB/T 14142-2017 Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique
GB/T 14146-1993 Silicon epitaxial layers—Determination of carrier concentration—Mercury probe Valtage-capacitance method
GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method
GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method
GB/T 14264-1993 Semiconductor materials—Terms and definitions
GB/T 14264-2009 Semiconductor materials—Terms and definitions
GB/T 14264-2024 Terminology of semiconductor materials
GB/T 14847-1993 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T 19921-2005 Test method of particles on silicon wafer surfaces
GB/T 19921-2018 Test method for particles on polished silicon wafer surfaces
GB/T 24578-2009 Test method for measuring surface metal contamination on silicon wafers by total reflection X-ray fluorescence spectroscopy
GB/T 24578-2015 Test method for measuring surface metal contamination on silicon wafers by total reflection X-Ray fluorescence spectroscopy
GB/T 24578-2024 Test method for measuring surface metal contamination on semiconductor wafers—Total reflection X-Ray fluorescence spectroscopy
GB/T 29507-2013 Test method for measuring flatness,thickness and total thickness variation on silicon wafers—Automated non-contact scanning
GB/T 32280-2015 Test method for warp of silicon wafers—Automated non-contact scanning method
GB/T 32280-2022 Test method for warp and bow of silicon wafers—Automated non-contact scanning method
YS/T 28-1992 Silicon wafer packaging
YS/T 28-2015 Package of silicon wafers
YS/T 28-2024 YS/T 28-2024 Silicon wafer packaging and labeling
GB/T 14847-2025 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates—Infrared reflectance method
Related Standards
GB/T 13388-1992
Replaced
GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal silicon slices and wafers by X-ray techniques
GB/T 13389-1992
Replaced
GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T 13843-1992
Abolished
GB/T 13843-1992 Polished monocrystalline sapphire substrates
GB/T 14015-1992
Active
GB/T 14015-1992 Silicon on sapphire epitaxial wafers
GB/T 14139-1993
Replaced